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| TetraFET D2008UK METAL GATE RF SILICON FET MECHANICAL DATA 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 28V - 400MHz SINGLE ENDED FEATURES 5.08 (0.200) typ. * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS 2.54 (0.100) 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 * LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE * HIGH GAIN - 13 dB MINIMUM 45 TO-39 PACKAGE PIN1 - DRAIN PIN2 - GATE PIN3 - SOURCE APPLICATIONS * VHF COMMUNICATIONS from DC to 400MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 29W 65V 20V 2A -65 to 150C 200C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/97 D2008UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 400MHz VDS = 0 VDS = 28V VDS = 28V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.2A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.4A 1 0.36 13 40 20:1 65 Typ. Max. Unit V 2 1 7 mA A V S dB % -- 20 11 1 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 6.0C / W Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/97 |
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